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Surface passivation of composition graded base in GaAlAs/GaInP/GaAsheterojunction bipolar transistor
Published online by Cambridge University Press: 15 June 1999
Abstract
A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface reMayns necessary to retain a high enough current gain for small emitter high-frequency devices.
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- © EDP Sciences, 1999
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