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Non-contact C-V measurements of ultra thin dielectrics

Published online by Cambridge University Press:  15 July 2004

P. Edelman ,
A. Savtchouk ,
M. Wilson ,
J. D'Amico ,
J. N. Kochey ,
D. Marinskiy  and
J. Lagowski
P. Edelman*
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
A. Savtchouk
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
M. Wilson
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
J. D'Amico
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
J. N. Kochey
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
D. Marinskiy
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
J. Lagowski
Affiliation:
Semiconductor Diagnostics Inc. 3650 Spectrum Blvd. #130, Tampa, FL 33612, USA
*
[email protected]
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Abstract

In this paper, we present a non-contact C-V technique for ultra-thin dielectrics on silicon. The technique uses incremental corona charging of dielectric and a measurement of the surface potential with a vibrating capacitive electrode. A differential quasistatic C-V curve is generated using time-resolved measurements. The technique incorporates transconductance corrections that enable corresponding ultra-low electrical oxide thickness (EOT) determination down to the sub-nanometer range. It also provides a means for monitoring the flat band voltage, VFB, the interface trap spectrum, DIT, and the total dielectric charge, QTOT. This technique is seen as a replacement for not only MOS C-V measurements but also for mercury-probe C-V. In addition, EOT measurement by the corona C-V has a major advantage over optical thickness methods because it is not affected by water adsorption and molecular airborne contamination, MAC. These effects have been a problem for optical metrology of ultra-thin dielectrics.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 495 - 498
Copyright
© EDP Sciences, 2004

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References

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