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Imaging a GaAlAs laser diode in operation using apertureless scanning near-field optical microscopy*

Published online by Cambridge University Press:  15 March 1999

G. Wurtz ,
R. Bachelot  and
P. Royer
G. Wurtz
Affiliation:
Laboratoire de Nanotechnologie et d'Instrumentation Optique, Université de Technologie de Troyes, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex, France
R. Bachelot*
Affiliation:
Laboratoire de Nanotechnologie et d'Instrumentation Optique, Université de Technologie de Troyes, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex, France
P. Royer
Affiliation:
Laboratoire de Nanotechnologie et d'Instrumentation Optique, Université de Technologie de Troyes, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex, France
*
[email protected]
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Abstract

We report the local study of an operating double hetero-junction GaAs/GaAlAs laser diode by apertureless Scanning Near-field Optical Microscopy (SNOM). This study allows the characterization of the spatial properties of the light emitted by the laser source. The optical probe used is a tungsten tip vibrating (at frequency f) perpendicularly to theemitting surface. Suitable experimental parameters permitting us to accede tonear-field information have been defined. This has leaded to an experimentalconfiguration in which the probe vibration amplitude is "optimal". A far-fielddetection at grazing angle is used and a second harmonic (at frequency 2f) lock-indetection is performed. This configuration has permitted us to obtain SNOM images instimulated emission as well as in spontaneous emission. Above the threshold current,information concerning the emitted laser mode are obtained, whereas in spontaneousemission the SNOM images are linked to the index contrast of the laser diode frontfacet.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 3 , March 1999 , pp. 269 - 275
Copyright
© EDP Sciences, 1999

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Footnotes

*

This paper was presented at the special CFMCP colloquiumheld at Strasbourg-Illkirch the July 1st-3rd, 1998.

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