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Structural characterisation of $(11{\bar 2}0)$ 4H-SiC substrates bycathodoluminescence and X-ray topography

Published online by Cambridge University Press:  15 July 2004

P. Hidalgo ,
L. Ottaviani ,
H. Idrissi ,
M. Lancin ,
S. Martinuzzi  and
B. Pichaud
P. Hidalgo*
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France Dpto. Fisica de Materiales, Fac. Ciencias Fisicas - UCM. Ciudad Universitaria, 28040 Madrid, Spain
L. Ottaviani
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
H. Idrissi
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
M. Lancin
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
S. Martinuzzi
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
B. Pichaud
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
*
[email protected]
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Abstract

Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The $(11\bar{2}0)$-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial $(11\bar{2}0)$ 4H n+-type substrates.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 231 - 233
Copyright
© EDP Sciences, 2004

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References

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