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Nanopipes in GaN: photo-etching and TEM study

Published online by Cambridge University Press:  15 July 2004

S. Lazar ,
J L Weyher ,
L. Macht ,
F. D. Tichelaar  and
H. W. Zandbergen
S. Lazar*
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
J L Weyher
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
L. Macht
Affiliation:
Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
F. D. Tichelaar
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
H. W. Zandbergen
Affiliation:
National Center for HREM, Kavli Institute of Nanoscience Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
*
[email protected]
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Abstract

Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 275 - 278
Copyright
© EDP Sciences, 2004

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