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Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds

Published online by Cambridge University Press:  15 July 2004

R. Kudrawiec ,
G. Sek ,
J. Misiewicz ,
L. H. Li  and
J. C. Harmand
R. Kudrawiec*
Affiliation:
Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
G. Sek
Affiliation:
Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
J. Misiewicz
Affiliation:
Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
L. H. Li
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France
J. C. Harmand
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France
*
[email protected]
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Abstract

Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ~ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 313 - 316
Copyright
© EDP Sciences, 2004

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References

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