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X-Ray Reciprocal space mapping studies of strained GaN/AlGaN quantum wells

Published online by Cambridge University Press:  17 March 2011

Olivier Briot ,
Sandra Ruffenach-Clur ,
Matthieu Moret  and
Roger Louis Aulombard
Olivier Briot
Affiliation:
Groupe d'Etudes des Semiconducteurs, UMR5650, CC074, Université Montpellier II, Place E.Bataillon 34095 Montpellier Cedex 5, France
Sandra Ruffenach-Clur
Affiliation:
Groupe d'Etudes des Semiconducteurs, UMR5650, CC074, Université Montpellier II, Place E.Bataillon 34095 Montpellier Cedex 5, France
Matthieu Moret
Affiliation:
Groupe d'Etudes des Semiconducteurs, UMR5650, CC074, Université Montpellier II, Place E.Bataillon 34095 Montpellier Cedex 5, France
Roger Louis Aulombard
Affiliation:
Groupe d'Etudes des Semiconducteurs, UMR5650, CC074, Université Montpellier II, Place E.Bataillon 34095 Montpellier Cedex 5, France
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Abstract

In this work, we report on the systematic X-ray reciprocal space mapping of a series of GaN/AlGaN samples, with different Al content and well thickness. For coherently grown samples, we present a calculation which allow us to precisely determine the strain state and Al content in the samples in one diffraction experiment. In our samples, both GaN and AlGaN are strained, and we discuss the effect of these strains on the band structure of GaN, which is probed by low temperature reflectivity and correlates perfectly our x-ray results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.40
Copyright
Copyright © Materials Research Society 2001

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References

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