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X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

Published online by Cambridge University Press:  15 February 2011

M.M. Waitew  and
S. Ismat Shah
M.M. Waitew
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716.
S. Ismat Shah
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716. E.I. du Pont de Nemours and Company, Central Research and Development, Experimental Station, P.O. Box 80356, Wilmington, DE 19880–0356.
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Abstract

Diamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 529
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Lux, B. and Haubner, R., in Diamond Films and Coatings, edited by Davis, R.F., Noyes Publications, New Jersey, USA (1992). pp. 183–243.Google Scholar
2. Jindal, P.C., Quinto, D.T., Wolfe, G.J., Thin Solid Films, 154, 361 (1989).Google Scholar
3. McCune, R.C., Hoffman, D.W., Whalen, T.J. and McHugh, C.O., Mat Res. Symp. Proc., 130, 261 (1989).Google Scholar
4. Lux, B. and Haubner, R., in Diamond Materials, edited by Purdes, A.J., Angus, J.C., Davis, R.F., Meyerson, B.M., Spear, K.E., and Yoder, M., The Electrochemical Society, Pennington, NJ, (1991), PV 91–8, p. 314.Google Scholar
5. Lee, Y.H., Bachman, K.J., Glass, J.T., LeGrice, Y.M. and Nemanich, R.J., Appl. Phys. Lett., 57, 1916 (1990).Google Scholar
6. MWaitc, M. and Shah, S.I., Appl. Phys. Lett, 60, 2346 (1992).Google Scholar
7. Shah, S.I. and Waite, M.M., Appl. Phys. Lett, 61, 3113 (1992).CrossRefGoogle Scholar
8. Lux, Benno and Haubner, R., in Diamond Films and Coatings, edited by Davis, R.F., Noyes Publications, NJ, USA (1992). pp. 6.Google Scholar
9. Mizokawa, Y., Miyasato, T., Kakamura, S., Geib, K., and Wimsen, C., J. Vac. Sci. Technol., A 5, 2809 (1987).Google Scholar
10. Kasi, S.R., Kang, H., and Rabalais, J.W., J. Chem. Phys. 88, 5914 (1988).Google Scholar
11. Angus, J.C., Li, Z., Sunkara, M., Gat, R., Anderson, A.B., Mehandru, S.P., and Geis, M.W., in Diamond Materials, edited by Purdes, A.J., Angus, J.C., Davis, R.F., Meyerson, B.M., Spear, K.E., and Yoder, M., The Electrochemical Society, Pennington, NJ, (1991), PV 91–8, p. 125.Google Scholar
12. Briggs, D. and Seah, M.P., in Practical Surface Analysis, John Wiley & Sons Publishers, New York (1987), pp. 108–111.Google Scholar