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Xps Studies of Hydrogen and Oxygen Bondinguy Configurations in Hydrogenated Microcrystalline Silicon Materials Produced by Neutron Irradiation

Published online by Cambridge University Press:  28 February 2011

Y. C. Koo ,
G. C. Weatherly ,
R. Sodhi ,
S. J. Thorpet  and
K. T. Austt
Y. C. Koo
Affiliation:
IBM Canada, Dept. 458, 844 Don Mills Rd. North York, Ont. M3C 1V7, Canada
G. C. Weatherly
Affiliation:
McMaster University, Material Science and Engineering, Hamilton, Ont., Canada
R. Sodhi
Affiliation:
Center for Biomaterial, U of Toronto, 170 College St. Toronto, Ont., Canada
S. J. Thorpet
Affiliation:
Metallurgy and Material Science, U of Toronto, 184 College St. Toronto, Ont., Canada
K. T. Austt
Affiliation:
Metallurgy and Material Science, U of Toronto, 184 College St. Toronto, Ont., Canada
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Abstract

The bonding of Si atoms in μc-Si:H thin films has been investigated using X-ray photoelectron spectroscopy (XPS) in conjunction with infra-red spectroscopy (IR), secondary ion mass spectroscopy (SIMS) and analytical electron microscopy (TEM/EDX/EELS) data. By using a-Si:H and single crystal silicon as reference samples, structural and hydrogen effects could be assessed, since both a-Si:H and μc-Si:H have a similar concentration of hydrogen based on the N15 hydrogen profiling data, but different structures. On the other hand, single crystal silicon and μc-Si:H both have a diamond cubic structure based on electron diffraction data, but single crystal silicon contains little or no hydrogen except adsorbed at the surface. Based on the XPS and IR data, charge transfer of the Si2p core level towards a deep lying level was observed in the μc-Si:H material. IR measurements snowed a large amount of hydrogen was located in the grain boundaries. The charge transfer is mainly due to a change in the hydrogen bonding configuration. A well bonded oxide is formed in the μc-Si:H material near the surface with an almost complete absence of the Si3+ intermediate oxide state. The presence of a large amount of hydrogen (25 at.%) even at a high volume fraction (70%) of μc-phase may limit the oxidation and promote better oxide formation. The variation of the quality of the oxide/μc interface could be a possible explanation for the different photoluminescence observed by various groups for porous μc-Si material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 525
Copyright
Copyright © Materials Research Society 1993

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References

1. Wagner, S., Wolff, S.H. and Gibson, J.M.; MRS Symp. Proc. 164, 161, (1990)Google Scholar
2. Robinson, M.B., Dillon, A.C., Haynes, D.R. and George, S.M; Appl. Phys. Lett. 61, (12) 1414, (1992)Google Scholar
3. Vardeny, Z.V., Wei, X., Hess, B.C., Han, S.G. and Nitta, S.; J. of Non-Cryst. Solids, 141, 66, (1992)Google Scholar
4. Koo, Y.C., Perrin, R., Aust, K.T. and Zukotynski, S.; Metall. Trans. 19A, 1345, (1988)Google Scholar
5. Koo, Y.C., Perrin, R., Aust, K.T., Zukotynski, S. and Kruzelecky, R.V.; J. Appl. Phys. 63, 2443,(1988)Google Scholar
6. Koo, Y.C., Perrin, R., Aust, K.T. and Zukotynski, S.; MRS Symp. Proc. 100, 429, (1988)Google Scholar
7. Koo, Y.C., Weatherly, G.C., Thorpe, S.J., Aust, K.T. and Zukotynski, S.; J of Non-Cryst. Solids, 134, 226, (1991)Google Scholar
8. Lanford, W.A.; Nucl. Instr. and Math. 149, 1, (1978)Google Scholar
9. Della Sala, D. and Fortunato, G., J. Electro Chem. Sco. 137, (8), 2550, (1990)Google Scholar
10. EHimpsel, J., Mcfeely, F.R., Taleb-Ibrahimi, A. and Yarmoff, J.A.; Phys. Rev. B, 38, (9), 6084, (1988)Google Scholar
11. Niwano, M., Katakuwa, H., Takeda, Y., Takakuwa, Y., Miyamoto, N., Hiraiwa, A. and Yagi, K.; J.of Vac. Sci. Technol. A9, 195, (1989)Google Scholar
12. Hagstrom, S., Nordling, C. and Siegbahn, K.; J. Phys. 178, 439, (1964)Google Scholar
13. Eberhart, M.E., Johnson, K.H. and Adler, D.; Phys. Rev. B, 26, (6), 3138, (1982)Google Scholar
14. Ito, T., Yasumatsu, T., Watabe, H., Iwami, M. and Hiraki, A.; MRS Symp. Proc. 164, 205,(1990)Google Scholar