Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:55:13.106Z Has data issue: false hasContentIssue false
  • English
  • Français

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

Published online by Cambridge University Press:  28 February 2011

H. D. Fuchs ,
M. Rosenbauer ,
M. S. Brandt ,
S. Ernst ,
S. Finkbeiner ,
M. Stutzmann ,
K. Syassen ,
J. Weber ,
H. J. Queisser  and
M. Cardona
H. D. Fuchs
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
M. Rosenbauer
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
M. S. Brandt
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
S. Ernst
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
S. Finkbeiner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
K. Syassen
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
H. J. Queisser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
M. Cardona
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart, Germany
Get access

Abstract

The optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 203
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
[2] Lehmann, V. and Gösele, U., Appl. Phys. Lett. 58, 856 (1990).Google Scholar
[3] Tsai, C., Li, K.-H., Kinoski, D.S., Qian, R.Z., Hsu, T.-C., Irby, J.T., Banerjee, S.K., Tasch, A.F., Campbell, J.C., Hance, B.K., White, J.M., Appl. Phys. Lett. 60, 1700 (1992).Google Scholar
[4] Prokes, S.M., Freitas, J.A. Jr, Searson, P.C., Appl. Phys. Lett. 60, 3295 (1992).Google Scholar
[5] Fuchs, H.D., Brandt, M.S., Stutzmann, M., and Weber, J., in Light Emission from Silicon, Mat. Res. Soc. Symposium Proceedings 256, edited by Iyer, S.S., Collins, R.T., and Canham, L.T. (MRS, Pittsburgh, 1992), p. 159.Google Scholar
[6] Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., and Cardona, M., Solid State Comm. 81, 307 (1992).Google Scholar
[7] Light Emission from Silicon, Mat. Res. Soc. Symposium Proceedings 256, edited by Iyer, S.S., Collins, R.T., and Canham, L.T. (MRS, Pittsburgh, 1992).Google Scholar
[8] Brandt, M.S., Breitschwerdt, A., Fuchs, H.D., Höpner, A., Rosenbauer, M., Stutzmann, M., and Weber, J., Applied Phys. A 54, 567 (1992).Google Scholar
[9] Stutzmann, M., Weber, J., Brandt, M.S., Fuchs, H.D., Rosenbauer, M., Deak, P., Höpner, A., Breitschwerdt, A., in Festkörperprobleme / Adv. Solid State Phys. 32 (Vieweg, Braunschweig/Wiesbaden, 1992).Google Scholar
[10] Brandt, M.S., Fuchs, H.D., Höpner, A., Rosenbauer, M., Stutzmann, M., Weber, J., Cardona, M., and Queisser, H.J., Mat. Res. Soc. Symposium Proceedings 262, (MRS, Pittsburgh, 1992) in print.Google Scholar
[11] Fuchs, H.D., Stutzmann, M., Brandt, M.S., Rosenbauer, M., Weber, J., and Cardona, M., Phys. Scripta T45, 309 (1992).Google Scholar
[12] Fuchs, H.D., Stutzmann, M., Brandt, M.S., Rosenbauer, M., Weber, J., Breitschwerdt, A., and Cardona, M., to be published.Google Scholar
[13] Rosenbauer, M., Molinàs-Mata, P. et al., to be published.Google Scholar
[14] Deak, P., Rosenbauer, M., Stutzmann, M., Weber, J., and Brandt, M.S., Phys. Rev. Lett. 69, 2531 (1992).Google Scholar
[15] Urbach, F., Phys. Rev. 92, 1324 (1962).Google Scholar
[16] Zhou, W.Z., Shen, H., Harvey, J.F., Lux, R.A., Dutta, M., Lu, F., Perry, C.H., Tsu, R., Kalkhoran, N.M., and Namavar, F., Appl. Phys. Lett. 61, 1435 (1992).Google Scholar
[17] Sood, A.K., Jayaram, K., and Victor, D. Muthu, S., J. Appl. Phys. 72, 4963 (1992).Google Scholar
[18] Camassel, J., Massone, E., Lyapin, S., Allegre, J., Vicente, P., Foucaran, A., Raymond, A., and Robert, J.L., in Proceedings of the 21st Int. Conf. on the Physics of Semiconductors (Beijing, 1992).Google Scholar
[19] Lauerhaas, J.M., Credo, G.M., Heinrich, J.L., and Sailor, M.J., in Light Emission from Silicon, Mat. Res. Soc. Symposium Proceedings 256, edited by Iyer, S.S., Collins, R.T., and Canham, L.T. (MRS, Pittsburgh, 1992), p. 137.Google Scholar
[20] Ernst, S., Rosenbauer, M., and Syassen, K., to be published.Google Scholar