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UV Raman Study of A1(LO) and E2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

Published online by Cambridge University Press:  17 March 2011

Dimitri Alexson ,
Leah Bergman ,
Robert J. Nemanich ,
Mitra Dutta ,
Michael A. Stroscio ,
C.A. Parker ,
S.M. Bedair ,
N.A. El-Masry  and
Fran Adar
Dimitri Alexson
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695-8202, U.S.A
Leah Bergman
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695-8202, U.S.A
Robert J. Nemanich
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695-8202, U.S.A
Mitra Dutta
Affiliation:
U.S. Army Research Office, P.O. Box 12211, Research Triangle Park, NC 27709
Michael A. Stroscio
Affiliation:
U.S. Army Research Office, P.O. Box 12211, Research Triangle Park, NC 27709
C.A. Parker
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, NC 27695
S.M. Bedair
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, NC 27695
N.A. El-Masry
Affiliation:
North Carolina State University, Materials Science and Engineering, Raleigh, NC 27695
Fran Adar
Affiliation:
Jobin Yvon HORIBA Group, 3880 Park Avenue, Edison, NJ, 08820-3097, U.S.A
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Abstract

We report on UV Raman spectroscopy of InxGa1−xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G9.7
Copyright
Copyright © Materials Research Society 2001

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References

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