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Understanding Metastable Defect Creation in CIGS by Detailed Device Modeling and Measurements on Bifacial Solar Cells

Published online by Cambridge University Press:  01 February 2011

Jin Woo Lee
Affiliation:
[email protected], University of Oregon, Physics, 824 Pool st. #15, Eugene, OR, 97401, United States, 541-255-6668
David Berney Needleman
Affiliation:
[email protected], University of Oregon, Physics, Eugene, OR, 97403, United States
William N. Shafarman
Affiliation:
[email protected], University of Delaware, Institute of Energy Conversion, Newark, DE, 19716, United States
J. David Cohen
Affiliation:
[email protected], University of Oregon, Physics, Eugene, OR, 97403, United States
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Abstract

We present a compensated donor-acceptor conversion model to explain the metastable light-induced changes in the performance of CIGS solar cells. In this model, compensating donors plays the role of recombination channel. Modeling using SCAPS-1D yielded reasonable fits to the I-V curves in different metastable states, matching the experimentally observed decreases in short circuit current and fill factor as well as the lack of change in open circuit voltage. Comparison of the experimental results from bifacial solar cells and SCAPS simulations strongly supports the compensated donor-acceptor conversion model both qualitatively and quantitatively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1. Lee, J., Heath, J.T., Cohen, J.D., and Shafarman, W.N., Mat. Res. Soc. Symp. Proc. 865, 2005, pp. 373378.Google Scholar
2. Lany, S. and Zunger, A., Phys. Rev. B 72, 2005, 035215.Google Scholar
3. Lany, S. and Zunger, A., J. Appl. Phys. 100, 2006, 113725.Google Scholar
4. Lee, J., Heath, J.T., Cohen, J. D. and Shafarman, W.N., Proc. of 4th WCPEC, 2006, in press.Google Scholar
5. Burgelman, M., Nollet, P., and Degrave, S., Thin Solid Films 361, 2000, pp. 527532.Google Scholar
6. Pudov, A.O., Kanevce, A., Al-Thani, H. A., Sites, J. R. and Hasoon, F. S., J. Appl. Phys. 97, 2005, 064901.Google Scholar
7. Pudov, A.O., Sites, J.R., Contreras, M.A., Nakada, T. and Schock, H.-W., Thin Solid Films 480-481, 2005, pp. 273278.Google Scholar
8. Heath, J.T., Cohen, J.D., Shafarman, W.N., Liao, D.X., and Rockett, A.A., Appl. Phys. Lett. 80, 2002, 4540.Google Scholar
9. Rau, U., Weinert, K., N, Q., Dguyen, Mamor, M., Hanna, G, Jasenek, A., and Schock, H.W., Mat. Res. Soc. Symp. Proc. 668, 2001, art. H9.1.Google Scholar
10. Gloeckler, M., Ph.D. thesis, Colorado State University, 2005.Google Scholar
11. Lee, J.W., Cohen, J. D. and Shafarman, W.N., Thin Solid Films 480-481, 2005, pp. 336340.Google Scholar
12. Heath, J.T., Cohen, J.D., and Shafarman, W.N., J. Appl. Phys. 95, 2004, pp. 10001002.Google Scholar
13. Hegedus, S. S. and Shafarman, W.N., Prog. Photovolt: Res. Appl. 12, 2004, pp. 155176.Google Scholar