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Ultrathin Silicon Dioxide Films: Photo-Induced Growth

Published online by Cambridge University Press:  25 February 2011

Ian W. Boyd
Ian W. Boyd*
Affiliation:
Electronic & Electrical Engineering, University College London, Torrington Place, London WClE 7JE, UK
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Abstract

The reaction of oxygen with silicon induced by intense photon beams at different wavelengths is described. We find different enhancement rates applying to UV and visible radiation, which can be as high as 400% for thin film growth at low temperatures. Often, however, they can be so small that they may be completely overshadowed at high temperatures by the rapid oxidation rates arising from thermal contributions. By using UV radiation projected through a mask to induce low temperature photonic oxidation of silicon, we have grown directly patterned oxide structures dispensing with the need for conventional photolithographic etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 421
Copyright
Copyright © Materials Research Society 1989

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References

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