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Ultrasensitive Elemental Analysis of Materials Using Sputter Initiated Resonance Ionization Spectroscopy

Published online by Cambridge University Press:  22 February 2011

J. E. Parks ,
D. W. Beekman ,
H. W. Schmitt  and
M. T. Spaar
J. E. Parks
Affiliation:
Atom Sciences, Inc., 114 Ridgeway Center, Oak Ridge, Tennessee 37830
D. W. Beekman
Affiliation:
Atom Sciences, Inc., 114 Ridgeway Center, Oak Ridge, Tennessee 37830
H. W. Schmitt
Affiliation:
Atom Sciences, Inc., 114 Ridgeway Center, Oak Ridge, Tennessee 37830
M. T. Spaar
Affiliation:
Atom Sciences, Inc., 114 Ridgeway Center, Oak Ridge, Tennessee 37830
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Abstract

Sputter Initiated Resonance Ionization Spectroscopy (SIRIS) is a technique being developed by Atom Sciences, Inc. to perform ultrasensitive elemental analysis of materials. SIRIS uses sputtering to atomize a solid sample and resonance ionization (RIS) to selectively ionize an element of interest. The SIRIS technique is capable of detecting impurities at the 0.1 ppb level (5 × 1012/cm 3) in a routine analysis time of 5 minutes. RIS and the SIRIS technique are briefly reviewed. We report a detection efficiency for SIRIS of 2 ppb sensitivity and recent results are given for standard well-characterized samples of boron-doped silicon. Current progress is described for the development of depth profiling and the analysis of silicon in gallium arsenide. The SIRIS detection of silicon in standard reference materials certified by NBS is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 309
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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