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Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC.

Published online by Cambridge University Press:  01 February 2011

D.N. Zakharov ,
Z. Liliental-Weber ,
B. Wagner ,
Z.J. Reitmeier ,
E.A. Preble  and
R.F. Davis
D.N. Zakharov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
B. Wagner
Affiliation:
North Carolina State University, Raleigh, NC 27695
Z.J. Reitmeier
Affiliation:
North Carolina State University, Raleigh, NC 27695
E.A. Preble
Affiliation:
North Carolina State University, Raleigh, NC 27695
R.F. Davis
Affiliation:
North Carolina State University, Raleigh, NC 27695
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Abstract

Pendeo-epitaxy has been applied to nonpolar a-plane GaN layers in order to observe if such process will lead to defect reduction in comparison with direct growth on this plane. Uncoalesced and coalesced a-plane GaN layers with thicknesses 2μm and 12μm, respectively, have been studied by conventional and high resolution electron microscopy. The following structural defects have been observed in pendeo-epitaxial layers: (1) basal stacking faults, (2) threading dislocations, and (3) prismatic stacking faults. A drastic decrease in the density of threading dislocations and stacking faults was observed in ‘wing’ areas with respect to ‘seed’ areas. Cross-section images reveal cracks and voids at the areas where two coalesced wings meet each other. High resolution electron microscopy shows that the majority of stacking faults are low-energy planar defects of the types I1, I2 and I3. The I3 type basal stacking fault, predicted theoretically, was observed experimentally for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.14
Copyright
Copyright © Materials Research Society 2005

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