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Trace Impurities and Metastable States in a-Si:H
Published online by Cambridge University Press: 25 February 2011
Abstract
The effect of trace amounts of impurities such as carbon and nitrogen on the density of states in undoped a-Si:H has been investigated using drive-level capacitance profiling and transient photocurrent methods. The results indicate a significant correlation between impurity levels and the susceptibility to metastable state creation after light-soaking. We found this correlation to be independent of bandtail broadening and hydrogen content in the material.
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- Copyright © Materials Research Society 1990
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