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Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

Published online by Cambridge University Press:  10 February 2011

Q. Zhang ,
V. Madangarli ,
I. Khlebnikov ,
S. Soloviev  and
T. S. Sudarshan
Q. Zhang
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–[email protected]
V. Madangarli
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–[email protected]
I. Khlebnikov
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–[email protected]
S. Soloviev
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–[email protected]
T. S. Sudarshan
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–[email protected]
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Abstract

The electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 57
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Bhatnagar, M. and Baliga, B.J., IEEE Trans. ED 44, 645(1993).10.1109/16.199372Google Scholar
2. Neudeck, P.G., J. Electron. Mater. 24, 283(1995).10.1007/BF02659688Google Scholar
3. Schmitt, J. and Helbig, R., J. Electrochem. Soc. 141, 2262(1994).10.1149/1.2055100Google Scholar
4. Palmour, J. W., Patent, U. S. No. 5 612 260, (18 March 1997).Google Scholar
5. Tan, J., Das, M. K., Cooper, J. A. Jr, and Melloch, M. R., Appl. Phys. Lett. 70, 2280(1997).10.1063/1.119262Google Scholar
6. Dimitrijev, S., Li, H. F., Harrison, H.B., and Sweatman, D., IEEE Trans. EDL 18, 175(1997).10.1109/55.568752Google Scholar
7. Madangarli, V. P. and Sudarshan, T.S., Proc. of the 7thInt. Conf. on SiC, III-Nitrides, and Related Materials (ICSCIII-N'97), 665 (1997).Google Scholar
8. Soloviev, S., Khlebnikov, I., Madangarli, V. and Sudarshan, T. S., J. Electron. Mater. 27, 1124(1998).10.1007/s11664-998-0149-5Google Scholar
9. Tareev, B., Physic of Dielectric Materials, (Mir Publishers, Moscow, 1979).Google Scholar
10. Zhang, Q., Madangarli, V., Soloviev, S. and Sudarshan, T. S., to be presented at 1999 MRS Spring Meeting (unpublished).Google Scholar