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Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

Published online by Cambridge University Press:  01 February 2011

Karol Frohlich ,
Juan Pedro Espinos ,
Andrej Vincze ,
Milan Tapajna  and
Kristina Husekova
Karol Frohlich
Affiliation:
[email protected], Institute of Electrical Engineering, SAS, Dept. of Thin Oxide Films, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia, 00 421 2 54 77 58 06, 00 421 2 54 77 58 16
Juan Pedro Espinos
Affiliation:
[email protected], Instituto de Ciencia de Materiales de Sevilla, CSIC, Avda. Americo Vespucio, Sevilla, Spain, 410 92, Spain
Andrej Vincze
Affiliation:
[email protected], International Laser Centre,, Ilkovicova 3, Bratislava, Slovakia, 812 19, Slovakia
Milan Tapajna
Affiliation:
[email protected], Institute of Electrical Engineering, SAS, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia
Kristina Husekova
Affiliation:
[email protected], Institute of Electrical Engineering, SAS, Dubravska 9, Bratislava, Slovakia, 841 04, Slovakia
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Abstract

We have investigated advanced MOS structures containing Ru gate electrode, HfxSi1-xOy dielectric film and Si substrate. The Ru gate electrode was grown by MOCVD at 300 °C. The MOS structures were annealed for 30 min in forming gas and nitrogen at temperatures up to 550 °C. Capacitance-voltage measurements showed important shift of the flat band voltage of the Ru/ HfxSi1-xOy/Si gate stack after treatment at 550 °C. X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), reflection electron energy loss spectroscopy (REELS) and secondary ion mass spectroscopy (SIMS) were used to analyze interface between ruthenium and high-k dielectric film. Based on the analysis we were able to build up energy-band alignement for the Ru/ HfxSi1-xOy interface. We observed that the energy-band structure of the Ru/HfxSi1-xOy interface remains stable upon annealing in forming gas up to 550 °C. Presence of hydrogen revealed by SIMS can account for compensation of negative charges in HfxSi1-xOy during thermal treatment.

Keywords

Ruoxidex-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-02
Copyright
Copyright © Materials Research Society 2006

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References

1 Jelenkovic, E. J. and Tong, K. Y., J. Vac. Sci. Technol. B 22, 2319 (2004).Google Scholar
2 Zhong, H. C., Heuss, G., Misra, V., Luan, H. F., Lee, C. H., and Kwong, D. L., Appl. Phys. Lett. 78, 1134 (2001).Google Scholar
3 Park, K. J., Doub, J. M., Gougousi, T., and Parsons, G. N., Appl. Phys. Lett. 86, 051903 (2005).Google Scholar
4 Tapajna, M., Pisecny, P., Luptak, R., Husekova, K., Frohlich, K., Harmatha, L., Hooker, J. C., Roozeboom, F., and Jergel, M., Mat. Sci. in Semicon. Proc. 7, 271 (2004).Google Scholar
5 Yeo, Y-C., King, T-J., and Hu, C., Appl. Phys. Lett. 92, 7266 (2002).Google Scholar
6 Shamiryan, D., Paraschiv, V., Claes, M., Boullart, W., in Defects in High-κ Gate Dielectric Stack, edited by Gusev, E. (NATO Science Series, Springer, Netherlands, 2006), p. 331.Google Scholar
7 Li, Q., Wang, S. J., Huan, A. C. H., Chai, J. W., Pan, J. S. and Ong, C. K., Appl. Phys. Lett. 85, 6155 (2004).Google Scholar
8 Kraut, E. A., Grant, R. W., Waldrop, J. R., and Kowalczyk, S. P., Phys. Rev. Lett. 44, 1620 (1980).Google Scholar
9 Garvie, L. A. J., Rez, P., Alvarez, J. R., Buseck, P. R., Solid State Commun. 106 (5), 303 (1998).Google Scholar
10 Houssa, M., Afanas'ev, V. V., Stesman, A., Heyns, M. M., Appl. Phys. Lett. 77 1885 (2000).Google Scholar