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Thermal Losses and Temperature Measurement in SOI MEMS Heater

Published online by Cambridge University Press:  15 March 2011

Nicholas Moelders ,
Irina Puscasu ,
Mark P. McNeal ,
Martin U. Pralle ,
Lisa Last ,
William Ho ,
Anton C. Greenwald ,
James T. Daly ,
Edward A. Johnson  and
Thomas George
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Nicholas Moelders
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Irina Puscasu
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Mark P. McNeal
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Martin U. Pralle
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Lisa Last
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
William Ho
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Anton C. Greenwald
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
James T. Daly
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Edward A. Johnson
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Thomas George
Affiliation:
Jet Propulsion Laboratories, Pasadena, CA.
Daniel S. Choi
Affiliation:
Jet Propulsion Laboratories, Pasadena, CA.
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Abstract

A sensor chip has been designed and tested that uses a MEMS strip heater as both source and detector of infrared radiation. An optical cavity reflects infrared radiation back onto the source filament. Changes in reflected light intensity modify heater temperature, and the measured signal is a change in resistance. The effects of processing on electrical and thermal isolation were characterized and used to evaluate device performance. Thermally isolated, uniformly heated emitters are achieved using a backside release etch process. The fully released devices demonstrated superior electric to thermal-optical conversion, with the requisite narrow band emission for CO2 detection. Using these sensor-chips, CO2 detection was demonstrated, with projected sensitivities ≤0.1%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B5.20
Copyright
Copyright © Materials Research Society 2002

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References

1. Kinkade, B. R., Daly, J. T., and Johnson, E. A., “Simplified Component Architecture for Gas and Chemical Sensors in the Home”, Proc. SENSORS EXPO, 333–338(2000)Google Scholar
2. Johnson, E. A. and Bodkin, A., Patent Pending.Google Scholar
3. Greenwald, A.C., Daly, J.T., Johnson, E.A., Kinkade, B., McNeal, M., Pralle, M., Moelders, N., George, T., Choi, D., Biswas, R. and El-Kady, I., “Narrow Band Emission From Lithographically Defined Bandgap Structures in Silicon: matching Theory and Experiment”, Mat. Res. Sym. Proc., Nov 2000.Google Scholar
4. Johnson, E. A., Patent No. 5838016.Google Scholar
5. Maboudian, R., Ashurst, W. R., Carraro, C., Sensor and Actuators, 82 (1-3), pp. 219–223, 2000.Google Scholar