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Tetrahedral Amorphous Carbon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

F. J. Clough ,
B. Kleinsorge ,
W. I. Milne  and
J. Robertson
F. J. Clough
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, CB2 1PZ, U.K.
B. Kleinsorge
Affiliation:
Emerging Technologies Research Centre, DeMontfort University, The Gateway, Leicester, LEI 9BH, U.K.
W. I. Milne
Affiliation:
Emerging Technologies Research Centre, DeMontfort University, The Gateway, Leicester, LEI 9BH, U.K.
J. Robertson
Affiliation:
Emerging Technologies Research Centre, DeMontfort University, The Gateway, Leicester, LEI 9BH, U.K.
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Abstract

This paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 39
Copyright
Copyright © Materials Research Society 1996

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