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Temperature Dependence of the Optical Properties for InN Films Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Y. Ishitani ,
K. Xu ,
W. Terashima ,
H. Masuyama ,
M. Yoshitani ,
N. Hashimoto ,
S. B. Che  and
A. Yoshikawa
Y. Ishitani
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan VBL Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan Japan Science and Technology Agency, 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
K. Xu
Affiliation:
Japan Science and Technology Agency, 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
W. Terashima
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
H. Masuyama
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
M. Yoshitani
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
N. Hashimoto
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
S. B. Che
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan VBL Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan Japan Science and Technology Agency, 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
A. Yoshikawa
Affiliation:
Dep. of Electronics and Mechanical Engineering Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan VBL Chiba Univ., 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan Japan Science and Technology Agency, 1–33 Yayoicho, Inageku, Chiba, 263–8522, Japan
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Abstract

InN epitaxial layers are grown on sapphire substrates. The investigated samples have electron concentration in a range of 1.8 ×1018 − 1.1 ×1019 cm-3. Optical reflection and transmission measurements are performed. The plasma edge energy position in the spectra is constant in a measurement temperature range of 5 – 300 K. The reflection and transmission spectra are calculated on the basis of the LO phonon-electron coupling scheme and non-parabolic conduction band structure. From this analysis we find that the observed absorption edge is attributed to valence band to conduction band transition rather than the valence band to defect (impurity) band transition, and the intrinsic bandgap energy of 0.64 (±0.03) eV. This bandgap energy increases by 40 – 50 meV as the temperature decreases from 295 to 10 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.5
Copyright
Copyright © Materials Research Society 2004

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References

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