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Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals

Published online by Cambridge University Press:  21 February 2011

Sergei Ruvimov ,
Zuzanna Liliental-Weber ,
Wendy Swider ,
Jack Washburn  and
Douglas E. Holmes
Sergei Ruvimov
Affiliation:
Material Science Division, Lawrence Berkeley Laboratory, University of California, Mail Stop 62-203,1 Cyclotron Road, Berkeley, CA 94720
Zuzanna Liliental-Weber
Affiliation:
Material Science Division, Lawrence Berkeley Laboratory, University of California, Mail Stop 62-203,1 Cyclotron Road, Berkeley, CA 94720
Wendy Swider
Affiliation:
Material Science Division, Lawrence Berkeley Laboratory, University of California, Mail Stop 62-203,1 Cyclotron Road, Berkeley, CA 94720
Jack Washburn
Affiliation:
Material Science Division, Lawrence Berkeley Laboratory, University of California, Mail Stop 62-203,1 Cyclotron Road, Berkeley, CA 94720
Douglas E. Holmes
Affiliation:
Electronic Materials Engineering, 829 Flynn Road, Camarillo, CA 93012
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Abstract

Conventional and high resolution electron microscopy have been applied to characterize the microstructure of the CrAs-GaAs eutectic. The CrAs-GaAs eutectic crystals were directionally solidified by the Czochralski method in order to produce an ordered array of CrAs rods embedded in a GaAs matrix. The CrAs rods of 2-3 μm in diameter align parallel to the growth axis of the ingot. Where the GaAs matrix is found to contain structural defects, the CrAs rods are effectively defect-free. The CrAs has an orthorombic structure with the parameters a=3.5±0.1 Å, b=6.2±0.1 Å,c=5.7±0.1 Å.The c-axis is close to the direction of solidification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 151
Copyright
Copyright © Materials Research Society 1998

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References

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