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Tem Studies of Cosputtered Tisi 2 Films Containing Excess Silicon.

Published online by Cambridge University Press:  22 February 2011

R. Beyers ,
R. Sinclair  and
M. E. Thomas
R. Beyers
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford, CA 94305
R. Sinclair
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford, CA 94305
M. E. Thomas
Affiliation:
Fairchild Camera and Instrument Corporation, Palo Alto, CA 94304
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Abstract

The effect of excess silicon on the growth and microstructure of cosputtered TiSi 2 was investigated. Cosputtered films, with Si/Ti ratios between 2.5 and 4.5, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Excess Si in the asdeposited films formed a layer of epitaxial Si on the Si substrate. In addition, Si and SiO2 precipitates formed within the grains. The films became discontinuous when reacted at 1050°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 601
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Murarka, S. P., J. Vac. Sci. Technol, 17, 775 (1980).Google Scholar
2. Lew, P., Ph.D. Thesis, Stanford University, Stanford, CA (1983).Google Scholar