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Synthesis of a Metallic Ceramic -Ti3SiC2 by PDS Process and its Properties

Published online by Cambridge University Press:  11 February 2011

ZhengMing Sun
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Tohoku), 4–2–1 Nigatake, Miyagino, Sendai 983–8551, Japan ([email protected])
Hitoshi Hashimoto
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Tohoku), 4–2–1 Nigatake, Miyagino, Sendai 983–8551, Japan ([email protected])
ZheFeng Zhang
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Tohoku), 4–2–1 Nigatake, Miyagino, Sendai 983–8551, Japan ([email protected])
SongLang Yang
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Tohoku), 4–2–1 Nigatake, Miyagino, Sendai 983–8551, Japan ([email protected])
Toshihiko Abe
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Tohoku), 4–2–1 Nigatake, Miyagino, Sendai 983–8551, Japan ([email protected])
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Abstract

Powder mixtures of Ti/Si/C, Ti/SiC/C, Ti/Si/TiC, Ti/SiC/TiC and Ti/TiSi2/TiC were used for the synthesis of Ti3SiC2 by using a pulse discharge sintering (PDS) process. The Ti/Si/TiC powder was found to be the best among the five powder mixtures for the Ti3SiC2 synthesis. The highest content of Ti3SiC2 can be improved to about 99wt% at the sintering temperature of 1300°C for 15 minutes. The relative density of all the synthesized samples is higher than 98–99% at the sintering temperature above 1275°C. The nearly single phase Ti3SiC2 was found to show plastic deformation at room temperature and a good machinability. Both electrical and thermal conductivity were found to be more than two times of the value of a control pure Ti sample. The high-temperature mechanical tests confirmed that the Ti3SiC2 samples synthesized by the PDS process displayed a comparable performance with those fabricated by the other techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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