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Synthesis and Comparison of Boron Nitride Nanostructure Prepared on Silicon and Molybdenum Substrates by Laser Plasma Deposition Technique

Published online by Cambridge University Press:  28 March 2011

M. Sajjad ,
H. X. Zhang  and
P. X. Feng
M. Sajjad
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377 USA
H. X. Zhang
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377 USA
P. X. Feng*
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377 USA
*
*Corresponding author: E-mail: [email protected]
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Abstract

The synthesis of boron nitride nanowires on silicon (Si) and nanorods on molybdenum (Mo) substrates at the same experimental conditions was composed. Fine tip nanowires with diameters around 50 nm were produced on Si substrates, whereas, nanorods with diameter around 100 nm were formed on Mo substrates. The change in length from 5 μm to 100 μm for nanowires and 0.2 μm to 0.8μm for nanorods following variation of substrate temperature were studied systematically.

Scanning Electron Microscopy was used to analyze the surface images of BN nanowires and nanorods. Energy Dispersive X-Ray spectroscopy (EDS) was used to analyze boron and nitrogen concentration in the samples. The crystal structures of BN samples were investigated using Raman spectroscopy and x-ray diffraction. The experimental results showed that the nanorods are hexagonal mixed with cubic, whereas the nanowires are hexagonal.

Keywords

ablationBcrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc05-13
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Chopra, N.G., Luyren, R.J., Cherry, K., Crespy, V.H., Cohen, M.L. Louis, S.G., Zettl, A., Science 269 (1995) 966.Google Scholar
[2] Chen, Y., Zou, J., Cambell, S, J., Le Caer, G., Appl. Phys. Lett. 84 (2004) 2430.Google Scholar
[3] Chang, C.W., Han, W., Zettl, A., Appl. Phys. Lett. 86 (2005) 173102.Google Scholar
[4] Cumings, J., zettl, A., Solid State Commun. 129 (2004) 661.Google Scholar
[5] Suryavanshi, A.P., Yu, M., Wen, J., Tang, C., Bando, Y., Appl. Phys. Lett. 84 (2004) 2527.Google Scholar
[6] Loiseau, A. Willaime, F. Demoncy, N. hug, G. Pascard, H. Phys. Rev. Lett. 76 (1996) 4737.Google Scholar
[7] Lee, R.S., Cavillet, J., de la Chapelle, M.L., Loiseau, A., Cochon, J.L., Pigache, D., Thibault, J., Willime, F. Phys. Rev. B, 64 (2001) 405.Google Scholar
[8] Yu, J., Chen, Y., Wuhrer, R., Liu, Z.W., Ringer, S.P. Chem. Mater. 17 (2005) 5172.Google Scholar
[9] Shimizu, Y., Morioshi, Y., Tanaka, H., Komatsu, S. Appl. Phys. Lett. 75 (1999) 929.Google Scholar
[10] Zhi, C. Y., Bando, Y., Tang, C. C., Golberg, D. Solid Sate Commun. 135 (2005) 67.Google Scholar
[11] Feng, P.X., Zhang, H.X., Int Journal of Refractory Metals and Hard Materials 27 (2009) 823–828.Google Scholar
[12] Feng, P.X., Wang, X.P., Zhang, H.X., et al. J. Physics D: Appl. Phys. 40 (2007) 5239–5245.Google Scholar
[13] Taniguchi, Takashi and Yamaoka, Shinobu, New Diamond and Frontier Carbon Technology, Vol. 10 (2000) No.5].Google Scholar
[14] Grunze, M., Brundle, C.R., Tomanek, D., Surf. Sci. 119 (1982) 133.Google Scholar
[15] Nikolic, Ljubica M., Radonjic, Ljijana, Srdic, Vladimir V., Ceramics International 31 (2005) 261–266.Google Scholar
[16] Chan, C.Y., Zhang, W.J., Meng, X.M., et al. , Diamond and Related Materials 12 (2003) 1162–1168.Google Scholar
[17] Yang, Min, Huang, Daming, Hao, Pinghai, Zhang, Fulong, Hou, Xiaoyuan, and Wang, Xun, J. Appl. Phys. 75 (1994) 651–653.Google Scholar
[18] Werninghaus, T., Hahn, J., Richter, F., Appl. Phys. Lett. 70 (1997) 958.Google Scholar
[19] Zhang, W.J., Matsumoto, S., Phys. Rev. B 63(2001) 73201.Google Scholar
[20] Ye, J., Oechsner, H., Westermeyr, S., Vac, J.. Sci. Technol. A 19(5) (2001) 2294.Google Scholar
[21] Madapura, S., Steckl, A.J., Loboda, M., Journal of The Electrochemical Socity, 146 (1999)1197–1202.Google Scholar
[22] Zhang, W.J., Matsumoto, S., J. Mater. Res. 15 (2000) 2677). (W.J. Zhang, S. Matsumoto, Chemical Physics Letters 330 (2000) 243–248.Google Scholar