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Surface Modification of Cubic Gan Buffer Layer Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  17 March 2011

Akira Nagayama ,
Ryuji Katayama ,
Jun Wu ,
Kentaro Onabe ,
Hidetaka Sawada ,
Eliko Takuma ,
Hideki Ichinose  and
Yasuhiro Shiraki
Akira Nagayama
Affiliation:
Dept. of Advanced Materials Science, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan Saitama Laboratory, Japan Radio Co., Ltd., 2-1-4 Fukuoka, Kamifukuoka, Saitama, 356-0011, Japan
Ryuji Katayama
Affiliation:
Dept. of Advanced Materials Science, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan
Jun Wu
Affiliation:
Dept. of Advanced Materials Science, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan
Kentaro Onabe
Affiliation:
Dept. of Advanced Materials Science, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan
Hidetaka Sawada
Affiliation:
Dept. of Advanced Materials Science, University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan
Eliko Takuma
Affiliation:
Saitama Laboratory, Japan Radio Co., Ltd., 2-1-4 Fukuoka, Kamifukuoka, Saitama, 356-0011, Japan
Hideki Ichinose
Affiliation:
Saitama Laboratory, Japan Radio Co., Ltd., 2-1-4 Fukuoka, Kamifukuoka, Saitama, 356-0011, Japan
Yasuhiro Shiraki
Affiliation:
RCAST, University of Tokyo, 4-6-1 Komaba, Meguroku, 153-8904, Japan
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Abstract

Anisotropic X-Ray diffraction (XRD) and transport properties of cubic GaN grown on GaAs substrates correspond to the features of low-temperature grown GaN (LT-GaN) buffer layer. When the LT-GaN layer is grown on the surface tilted from (001) to [1-10] with annealing in arsenic ambient, the macroscopic step edges along [1-10] direction are modified by either the ambient of thermal annealing, or substrate misorientation. A parallel conduction in GaN, GaAs, and GaN/GaAs hetero-interface was observed by photoconductivity measurements. Transmission electron microscope (TEM) observation shows that self-annihilations for (-111) B stacking faults are preferentially occurred near GaAs interface when GaN film grown on the surface tilted from (001) toward [1-10] (As step edge) is annealed in arsenic ambient. TEM observation also shows that stacking faults and dislocations are preferentially generated near GaN/GaAs interface. It is suggested that anisotropic transport properties correspond to the well-like potential generated by band bending at GaN/GaAs interface. The nearly isotropic mobility of 3,000 cm2/Vsec at 77K is obtained by improving interface property.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.20
Copyright
Copyright © Materials Research Society 2001

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References

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