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Surface Conversion Effects in Plasma-Damaged p-GaN
Published online by Cambridge University Press: 03 September 2012
Abstract
The near-surface (400-500Å) of p-GaN exposed to high density plasmas is found to become more compensated through the introduction of shallow donors. At high ion fluxes or ion energies there can be type-conversion of this surface region. Two different methods for removal of the damaged surface were investigated; wet etching in KOH, which produced self-limiting etch depths or thermal annealing under N2 which largely restored the initial electrical properties.
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- Copyright © Materials Research Society 1999
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