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Surface Chemical Reactions Stimulated by Low Energy Electron Bombardment

Published online by Cambridge University Press:  28 February 2011

R. R. Kunz  and
T. M. Mayer
R. R. Kunz
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514
T. M. Mayer
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514
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Abstract

A low energy, broad beam electron source was used to induce chemical reactions on surfaces. Electron beam energies were selected to maximize the emission of secondary electrons, for the purpose of determining if these low energy electrons contributed to the overall reaction. Room temperature silicon oxidation showed maximum terminal oxide thickness (35 Å) at the primary electron energy that produced the maximum secondary electron flux (300 eV). XPS showed these films to be mostly sub-oxide in nature. Similar results were obtained in analogous experiments using tetraethoxysilane to deposit SiO2 and using iron pentacarbonyl to deposit Fe. By increasing the incident angle of the electron beam to 70 degrees from the normal, the deposition yields of SiO2 and Fe increased by 45% and 30%, respectively. This again was thought to be a result of secondary electron contributions, as the secondary yield increased by a factor of two upon tilting the beam.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 609
Copyright
Copyright © Materials Research Society 1987

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