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Surface and Interface Analysis of Thin-Film/Si(Substrate) Contacts by Sxes

Published online by Cambridge University Press:  03 September 2012

C. Heck ,
M. Kusaka ,
M. Hirai ,
H. Nakamura ,
M. Iwami  and
H. Watabe
C. Heck
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan.
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan.
M. Hirai
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan.
H. Nakamura
Affiliation:
Osaka Electro-Communication University, Hatsu, Neyagawa 572, Japan.
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan.
H. Watabe
Affiliation:
Matsushita Research Institute Inc., 3-10-1 Higashi-mita, Tama-ku, Kawasaki 214, Japan.
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Abstract

A soft X-ray emission spectroscopy(SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a thin-film(e.g., Cr)/Si(substrate) contact system, where the energy of primary electrons, Ep , is less than 20keV. An interesting point of this method is that we can have a specific signal for an element to be used as a finger print, otherwise it is difficult. By using this e-beam excited SXES, we can study an interface buried deep in a rather thick overlayer, e.g., more than a hundred of nm, which is due to the fact that a mean free path of a soft X-ray or an X-ray production depth is much larger than the mean free path of an energetic electron in solids. Electronic structural study of silicides by SXES is also shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 377
Copyright
Copyright © Materials Research Society 1997

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