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Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode

Published online by Cambridge University Press:  01 February 2011

Hisashi Shima ,
Fumiyoshi Takano ,
Yukio Tamai ,
Hidenobu Muramatsu ,
Hiroyuki Akinaga ,
Isao H Inoue  and
Hidenori Takagi
Hisashi Shima
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Fumiyoshi Takano
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Yukio Tamai
Affiliation:
[email protected], Sharp Corporation, Advanced Technology Research Laboratories, 1 Asahi, Daimon-cho, Fukuyama, 721-8522, Japan
Hidenobu Muramatsu
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Hiroyuki Akinaga
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Isao H Inoue
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, 305-8562, Japan
Hidenori Takagi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, 305-8562, Japan
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Abstract

The resistance switching in Pt/Co-O/Pt and Ta/Co-O/Pt has been investigated. Compared to Pt/Co-O/Pt, the reset current was more efficiently decreased in Ta/Co-O/Pt by using the load resistor in the forming process, indicating that the embedded resistance component with little parasitic capacitance effectively limits the current in the forming process. The reset process with the reset current lower than 0.15 mA was successfully demonstrated in Ta/Co-O/Pt. In addition, the high speed resistance switching by the voltage pulse with the pulse width of 20 ns was carried out, by investigating the pulse voltage height dependence of reset speed in Ta/Co-O/Pt.

Keywords

oxidememoryfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F05-19
Copyright
Copyright © Materials Research Society 2008

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References

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