Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:35:43.060Z Has data issue: false hasContentIssue false
  • English
  • Français

Submicron Roughness Determination at the Si-SiO2 Interface and Correlations to Prccessing Steps and Electronic Properties

Published online by Cambridge University Press:  22 February 2011

Peter O. Hahn ,
I. Lampert  and
A. Schnegg
Peter O. Hahn
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
I. Lampert
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
A. Schnegg
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
Get access

Abstract

A newly developed optical surface characterization technique using the diffuse scattered light of two laser beams will be presented. The method determines root-mean-square roughness values (RMS) of surfaces down to 1 Å and corresponding correlation lengths in the submicron area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 247
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

/1/ Schrieffer, J.R., Phys. Rev. 97, 641 (1955)Google Scholar
/2/ Stern, F. and Howard, W.E., Phys. Rev. 163, 816 (1967)Google Scholar
/3/ Cheng, Y.C., Proceedings of the 2nd International Conference on Solid Surfaces, Kyoto, Jpn., J. Appl. Phys. Suppl. 2, 363 (1974)Google Scholar
/4/ Goodnick, S.M., Ferry, D.K., Wilmsen, C.W., Liliental, Z., Fathy, D., and Krivanek, O.L., Phys. Rev. B, 32 (12), 8171 (1985)Google Scholar
/5/ Feenstra, R.M. and Oehrlein, G.S., Appl. Phys. Lett. 47, 97 (1985)Google Scholar
/6/ Hahn, P.O. and Henzler, M., J. Appl. Phys. 52, 4122 (1981) P.O. Hahn and M. Henzler, J. Vac. Sci. Technol. A2, 574 (1983)Google Scholar
/7/ Hahn, P.O. and Henzler, M., J. Appl. Phys. 54, 6492(1983)Google Scholar
/8/ Hahn, P.O., Yokohama, S., and Henzler, M., Surf. Sci., 142, 545 (1984)CrossRefGoogle Scholar
/9/ Mattsson, L., in “Thin Film Technologies”, SPIE Proceedings, No. 652, Innsbruck (1986)Google Scholar
/10/ Hahn, P.O. in Thin Films - Interfaces and Phenomena edited by Nemanich, R.J. and Ho, P.S. (Mater. Res. Soc. Proc. 54, p. 645–650, (1986)Google Scholar
/11/ Behm, J. (private communication), University of MunichGoogle Scholar
/12/ Grundner, M. and Jacob, H., Appl. Phys. A 39, 3206 (1986)Google Scholar
/13/ Wolters, D.R. and Schoot, J.J. v. d. in Dielectric Breakdown in MOS-devices, Part I, Philips J. Research, 40, 115 (1985)Google Scholar
/14/ Carim, A.H. and Bhattacharyya, A., Appl. Phys. Lett. 46, (9), 872 (1985)Google Scholar