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Sub-micron Emission and Charge Transport Modification of ZnO

Published online by Cambridge University Press:  01 February 2011

Ran Shi Wang ,
Jin An ,
Jian Bin Xu  and
Hock Chun Ong
Ran Shi Wang
Affiliation:
[email protected], The Chinese University of Hong Kong, Physics, Physics Department, CUHK, ShaTin, N.T., Hong Kong, Hong Kong, N/A, 000000, Hong Kong, 852-98357861
Jin An
Affiliation:
[email protected], The Chinese University of Hong Kong, Electronic Engineering, Hong Kong, N/A, 000000, Hong Kong
Jian Bin Xu
Affiliation:
[email protected], The Chinese University of Hong Kong, Electronic Engineering, Hong Kong, N/A, 000000, Hong Kong
Hock Chun Ong
Affiliation:
[email protected], The Chinese University of Hong Kong, Physics, Hong Kong, N/A, 000000, Hong Kong
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Abstract

Although oxide/semiconductor junctions have long been studied in the areas of microelectronics, new phenomena and interests arise from time to time. In particular, in the realm of nanotechnology where materials are shrunk at a length scale of nanometers, the role of heterojunctions in controlling the overall characteristics of the system will become more and more important. In here, we have developed a technique to modify the light emission and charge transport properties of oxide/ZnO system at different dimensionalities. Providing an oxidic overlayer (AlOx) is present on ZnO, a focused electron beam can be used to locally modify optical and electrical properties of ZnO. Under electron bombardment, we find the emission profile of ZnO gradually changes from green-yellow emitting into ultra-violet emitting while the conductivity decreases by more than two orders of magnitude at the same time. Well-defined sub-micron patterns with tunable optical and electrical properties can be fabricated on 2-D ZnO films and 1-D nanoribbons by carefully controlling the dose and energy density of the electron beam. Since ZnO is a versatile material, we believe our studies will shed light on the further use of ZnO in frontier technologies such as gas sensing, display technology, catalysis, spintronics, etc.

Keywords

electron irradiationoptical propertiesdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-38
Copyright
Copyright © Materials Research Society 2006

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References

1 Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., Steiner, T., J. Vac. Sci. & Technol. B 2004, 22, 932.Google Scholar
2 Look, D.C., Mater. Sci. & Eng. B 2001, 30, 383. A. Ohtomo, M. Kawasaki, IEICE Trans on Elect. E 2001, 38C, 1614.Google Scholar
3 Ginley, D.S. and Bright, C., MRS Bulletin, 2000, and reference therein.Google Scholar
4 Hui, K.C., Ong, H.C., Lee, P.F., and Dai, J.Y., Appl. Phys. Lett. 2005, 86, 152116.Google Scholar
5 Zhang, X.Y., Dai, J.Y., Ong, H.C., Wang, N., Chan, H.L.W., Choy, C.L., Chem. Phys. Lett. 2004, 393, 17.Google Scholar
6 Hui, K.C., An, J., Zhang, X.Y., Xu, J.B., Dai, J.Y. and Ong, H.C., Adv. Mater. 17, 1960 (2005).Google Scholar
7 Ohashi, N., Ishigaki, T., Okada, N., Taguchi, H., Sakaguchi, I., Hishita, S., Sekiguchi, T., and Haneda, H., J. Appl. Phys. 93, 6386 (2003); N. Ohashi, T. Ishigaki, N. Okada, T. Sekiguchi, I. Sakaguchi, and H. Haneda, Appl. Phys. Lett. 80, 2869 (2002).Google Scholar
8 Vanheusden, K., Seager, C.H., Warren, W.L., Tallant, D.R., and Voigt, J.A., Appl. Phys. Lett. 68, 403 (1996) Google Scholar
9 Reynolds, D.C., Look, D.C., and Jogai, B., J. Appl. Phys. 89, 6189 (2001); B. Guo, Z.R. Qiu, and K.S. Wong Appl. Phys. Lett. 82, 2290 (2003)Google Scholar
10 Hui, K.C., Lai, C.W., Ong, H.C., Thin Solid Films, 482, 222 (2005).Google Scholar