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Study on Thermal Stability of Thin CoSis Film

Published online by Cambridge University Press:  10 February 2011

Zhi-Guang Gu ,
Paul K. Chu ,
Jing Liu ,
Guo-Bao Jiang ,
Guo-Ping Ru  and
Bing-Zong Li
Zhi-Guang Gu
Affiliation:
Dept of Physics & Materials Science, City University of Hong Kong, Kowloon, HONG KONG
Paul K. Chu
Affiliation:
Dept of Physics & Materials Science, City University of Hong Kong, Kowloon, HONG KONG
Jing Liu
Affiliation:
Dept of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA
Guo-Bao Jiang
Affiliation:
Dept of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA
Guo-Ping Ru
Affiliation:
Dept of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA
Bing-Zong Li
Affiliation:
Dept of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA
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Abstract

The thermal stability of thin CoSi2 films formed from four layered structures: Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si has been studied using four-point-probe (FPP), TEM and RBS/channeling. It is found that thermal instability can be influenced by the polycrystalline structure in CoSi2. Growing epitaxial CoSi2 film on Si (100) using TiN capping and Ti interfacial layers can improve the thermal stability of thin CoSi2 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 273
Copyright
Copyright © Materials Research Society 1997

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