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A Study of Titanium Silicide Polycide Etching

Published online by Cambridge University Press:  25 February 2011

S. M. Bobbio ,
Y. S. Ho  and
T. Lopez
S. M. Bobbio
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
Y. S. Ho
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
T. Lopez
Affiliation:
Microelectronics Center of North Carolina P.O. Box 12889 Research Triangle Park, NC 27709
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Abstract

The reactive ion etching of polycide films (TiSi2 over polysilicon) is discussed. Experimental conditions which lead to anisotropy and the identification of certain contamination problems as well as their solution are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 243
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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