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Study of Electrical Properties of Microcrystalline Silicon Films Using AC Measurements

Published online by Cambridge University Press:  17 March 2011

Ely A. T. Dirani ,
Alexandre M. Nardes ,
Adnei M. Andrade ,
Fernando J. Fonseca  and
Reginaldo Muccillo
Ely A. T. Dirani
Affiliation:
LME, Dept. Eng. de Sistemas Eletronicos, Escola Politécnica da USP, São Paulo,SP, BRAZIL Dept. de Engenharia Elétrica – PUC, São Paulo, SP, BRAZIL
Alexandre M. Nardes
Affiliation:
LME, Dept. Eng. de Sistemas Eletronicos, Escola Politécnica da USP, São Paulo,SP, BRAZIL
Adnei M. Andrade
Affiliation:
LME, Dept. Eng. de Sistemas Eletronicos, Escola Politécnica da USP, São Paulo,SP, BRAZIL
Fernando J. Fonseca
Affiliation:
LME, Dept. Eng. de Sistemas Eletronicos, Escola Politécnica da USP, São Paulo,SP, BRAZIL
Reginaldo Muccillo
Affiliation:
CMDMC, CCTM, IPEN, São Paulo, SP, BRAZIL
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Abstract

Hydrogenated amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon films are indispensable materials for large area electronic devices like solar cells, image sensors and thin film transistors (TFTs). The interest of the µc-Si:H films arise from the fact that they combine the high optical absorption of a-Si:H and the electrical transport properties close to those of crystalline silicon. In this work we show the correlation between substrate deposition temperature, crystallinity and electrical properties of a-Si:H and µc-Si:H films. The films were prepared by a conventional PECVD (13.56 MHz) RF system from PH3/SiH4/H2 gas mixtures in the temperature range of 100 to 250°C. While phosphorus doped (n) a-Si:H are deposited yielding conductivity values no better than 10−2 S/cm, (n) µc-Si:H layers deposited at substrate temperature of 250°C show conductivity values higher than 101 S/cm, crystalline fraction up to 80% and Hall mobility of about 0.9 cm2. V−1.s−1. It was observed that a change in the dark conductivity behavior occurs around 140°C, with a large increase in the conductivity values. A corresponding increase is not seen in the average grain size and in the crystalline volume fraction, which shows an almost linear increase with the deposition temperature. This stronger influence of the temperature in the electrical characteristics of the µc-Si:H films may be related to the phosphorus activation, which occurs in higher degree at higher deposition temperatures. The correlation among Raman spectroscopy, Hall effect and AC conductivity measurements (frequency range 6 Hz to 13 MHz) shows that the crystalline phase dominates the electrical transport mechanism in µc-Si:H films. Preliminary results of AC measurements indicate that the electrical resistivity of each phase of this material can be determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A23.5
Copyright
Copyright © Materials Research Society 2001

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References

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