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The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO2-SiO2 Alloys

Published online by Cambridge University Press:  14 March 2011

G. Rayner Jr. ,
R. Therrien  and
G. Lucovsky
G. Rayner Jr.
Affiliation:
Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
R. Therrien
Affiliation:
Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
G. Lucovsky
Affiliation:
Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
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Abstract

The internal structures of various (ZrO2)x(SiO2)1-x alloys (x ≤ 0.5) were investigated. A remote plasma enhanced-metal organic chemical vapor deposition (RPEMOCVD) process was used to deposit films with varying alloy composition on Si(100) substrates. This study indicates that for the glassy silicate phase, g-ZrSiO4, a glass transition temperature, Tg, exists between 800°C and 900°C at which phase separation into the end-member components, SiO2 and ZrO2, occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C1.3.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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