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Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

Published online by Cambridge University Press:  25 February 2011

Hong Koo Kim  and
Michelle Mathur
Hong Koo Kim
Affiliation:
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA 15261
Michelle Mathur
Affiliation:
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA 15261
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Abstract

Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 317
Copyright
Copyright © Materials Research Society 1992

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References

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