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Structural and Electrical Characteristics of the Thermally Evaporated InSb Thin Films

Published online by Cambridge University Press:  21 February 2011

S. Yeh ,
D. J. Cheng ,
G. F. Chi  and
M. T. Chu
S. Yeh
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Bldg. 77, 195 Chung Hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
D. J. Cheng
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Bldg. 77, 195 Chung Hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
G. F. Chi
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Bldg. 77, 195 Chung Hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
M. T. Chu
Affiliation:
Electro-Optics & Peripherals Development Center, Industrial Technology Research Institute, Bldg. 11, 195 Chung Hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C
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Abstract

Polycrystalline InSb thin films have been prepared by the two-source thermal co-evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown films have been heat treated under N2 atmosphere at different temperatures ranged from 520 to 535 C. Both as-grown films have (220) diffraction as the main peak. The heat treated films which have high mobility values show the (111) preferred orientation. For the heat treated film on oxidized Si substrate, the TEM cross sectional morphologies show the existence of the precipitaion of the second phase and the interface diffusion of InSb into the SiOx layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 135: Symposium M – Solid State Ionics I , 1988 , 483
Copyright
Copyright © Materials Research Society 1989

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