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Stress and Resistivity in Reactively Sputtered Amorphous Metallic Ta-Si-N Films
Published online by Cambridge University Press: 26 February 2011
Abstract
We have measured the stress and the electrical resistivity of Ta-Si-N films deposited in an rf magnetron system by reactive sputtering of Ta5 Si3 target in an Ar-N2 mixture. The stress was determined by measuring the curvature of thin Si substrates with a stylus instrument. The atomic composition was established from backscattering spectra. The resistivity was derived from four-point probe measurements. The stress, the resistivity, and the atomic composition were studied as a function of various processing parameters (total pressure, gas composition). The stress is always compressive and can be changed from 0.38 - 1.48 GPa by such means. The resistivity is principally a function of the nitrogen composition and rises as the nitrogen amount increases. The results are compared with those reported for other amorphous metallic alloys.
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- Copyright © Materials Research Society 1991
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