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Strain Relaxation and Oxide Formation on Annealed W/C Multilayers
Published online by Cambridge University Press: 15 February 2011
Abstract
Tungsten-carbon (W/C) Multilayer structures are used as X-ray mirrors and other optical elements. The optical properties of such elements are highly sensitive to changes in strain due to thermal processing. Sensitive curvature measurements were performed on 40A period W/C Multilayer structures on Si substrates using a two beam laser reflection technique. A compressive stress of approximately 1530 MPa was measured in these sputtered multilayer films. Thermal annealing to 500 C in air and under vacuum resulted in very little strain relaxation in the multilayers but X-ray diffraction data show a slight increase of the multilayer period. Significant strain relaxation, though, was observed when a 400Å W buffer layer was included. Thermal annealing of these samples to 400–500°C resulted in large strain relaxation due to the formation of a-W crystals in the buffer layer. Moderate oxide formation on air annealed samples as measured by SIMS was shown not to be a dominant mechanism of strain relaxation.
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- Copyright © Materials Research Society 1994