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Spatial Distribution of Neutral EL2 as Measured Optically for Thin Semi-Insulating GaAs Wafers, and Relevance to Device Parameters
Published online by Cambridge University Press: 28 February 2011
Abstract
Measurements are reported, for 0.5 mm thick semi-insulating (S.I.) GaAs wafers, of the neutral EL2 distribution, the pattern of dislocations, and of MESFET electrical parameters - these devices built on the same wafers. These results indicate that the device properties are more affected by EL2 nonuniformity than by dislocation density pattern.
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- Copyright © Materials Research Society 1985
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