Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T18:04:03.930Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

Published online by Cambridge University Press:  21 February 2011

Weimin Si ,
Michael Dudley ,
Pengxing Li  and
Renjie Wu
Weimin Si
Affiliation:
Department of Mater. Sci. and Engr., SUNY at Stony Brook, Stony Brook, NY 11794-2275
Michael Dudley
Affiliation:
Department of Mater. Sci. and Engr., SUNY at Stony Brook, Stony Brook, NY 11794-2275
Pengxing Li
Affiliation:
Department of Mater. Sci., Shanghai Jiao Tong University, Shanghai 200030, P. R. China
Renjie Wu
Affiliation:
Department of Mater. Sci., Shanghai Jiao Tong University, Shanghai 200030, P. R. China
Get access

Abstract

The products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 275
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 MacKay, R. A., Brindley, P. K., and Froes, F. H., J. Metals, 43 (5), p. 23 (1991).Google Scholar
2 Larsen, J. M., Revelos, W. C., and Gambone, M. L., in Intermetallic Matrix Composites II, edited by Miracle, D. B. et al, (MRS Symp. Proc. 273, Pittsburgh, PA, 1992), p. 3–16.Google Scholar
3 Metcalf, A. G. and Klein, M. J., in Composite Materials: Interfaces in Metal MatrixComposites, edited by Metcalf, A. G. (Academic Press, New York, 1974), pp. 142–154.Google Scholar
4 Rhodes, C. G., ref. 2, p. 17–29.Google Scholar
5 Chou, T. C. and Joshi, A., J. Mater. Res., 7(5), p. 1253 (1992).Google Scholar
6 Si, W., Li, P., and Wu, R., in Control of Interfaces in Metal and Ceramics Composites, edited by Lin, R. Y. and Fishman, S. G. (TMS Proc., Warrendale, PA, 1994), p. 81–94.Google Scholar
7 Misra, A. K., Metall. Trans. A, 22, p. 715 (1990).Google Scholar
8 Konitzer, D. G. and Loretto, M. H., Materials Science and Technology, July, 5, p. 627 (1989).Google Scholar
9 Davis, L. E., MacDonald, N. G., Palmberg, P. W., and Weber, R. E., Handbook of Auger Electron Spectroscopy, (published by Perkin-Elmer Corp., Eden Prairie, MN), 1978, pp. 5–17.Google Scholar
10 Shewmon, P., Diffusion in Solids, 2nd edition, TMS, Warrendale, PA, 1989, pp. 9–26.Google Scholar
11 Schuster, J. C., Nowotny, H., and Vaccaro, C., J. Solid State Chemistry, 32, p. 213 (1980).Google Scholar
12 Konitzer, D. G. and Loretto, M. H., Acta. Metall., 37, p. 97 (1989).Google Scholar
13 Elliott, R. P., Constitution of Binary Alloys, McGraw-Hill, New York, 1965, pp. 232–33.Google Scholar