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Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

Published online by Cambridge University Press:  11 February 2011

R.E. Melgarejo ,
M.S. Tomar ,
A. Hidalgo  and
R.S. Katiyar
R.E. Melgarejo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
M.S. Tomar
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
A. Hidalgo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
R.S. Katiyar
Affiliation:
Physics Department, University of Puerto Rico, San Juan, PR 00931–3343
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Abstract

Nd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.35
Copyright
Copyright © Materials Research Society 2003

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Email: [email protected]

References

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