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Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

Published online by Cambridge University Press:  17 March 2011

D.L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A
D.W.M. Marr
Affiliation:
Department of Chemical Engineering and Petroleum Refining, Colorado School of Mines, Golden, CO 80401, U.S.A
B.P. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
B. Yan
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
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Abstract

The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapor deposition (PECVD) and hot-wire chemical-vapor deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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