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Si-On-Sapphire and Si Implanted with Zr Ions: Lattice Location, Solid Phase Epitaxial Regrowth, and Electrical Properties

Published online by Cambridge University Press:  15 February 2011

I. Golecki  and
I. Suni
I. Golecki
Affiliation:
Rockwell International Corporation, Microelectronics Research and Development Center, 3370 Miraloma Avenue, Anaheim, CA 92803. California Institute of Technology, Mail Code 116–81, Pasadena, CA 91125.
I. Suni
Affiliation:
California Institute of Technology, Mail Code 116–81, Pasadena, CA 91125.
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Abstract

Zr ions have been implanted at 300 keV (Rp= 1400Å) and doses of 3×1012 − 3×l015 Zr/cm2 into Si-implanted, amorphous Sip layers on (100) bulk Si and Sion- sapphire. Rutherford backscattering and channeling spectrometry was used to study the Zr distribution and lattice location during solid-phase regrowth of the Si layers. The regrowth at 500—550°C stops at 3.4хl020 Zr/cm3, and Zr exhibits interface trapping and surface segregation effects. In this temperature range, Zr is essentially non-substitutional, and inactive electrically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 541
Copyright
Copyright © Materials Research Society 1982

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References

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