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Simultaneous Monitoring of Wafer- and Environment-States During Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

K. J. Knopp
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
J. R. Ketterl
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
D. H. Christensen
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected] Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
T. P. Pearsall
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
J. R. Hill
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
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Abstract

We report the simultaneous monitoring of the environment-state and wafer-state during epitaxial crystal growth using a single real-time measurement. Atomic absorption spectroscopy (AAS) is used to monitor the incident molecular beam flux while UV reflectance (UVR) at 396 nm with an incident angle of 78° is used to monitor growth on the wafer. We have studied the utility of AAS/UVR monitoring of AlxGa1-xAs deposition: AlAs growing on GaAs, GaAs on AlAs, and superlattice growth. Additionally, optical multichannel spectroscopy (OMS) data were acquired throughout the growth of a distributed Bragg reflector (DBR). The relationship of the structure of the real-time OMS data to absorption, optical path length variation, and differential layer thickness variations is also discussed. Numerical simulations of the real-time wafer-state monitors using pseudodielectric constants, appropriate at a growth temperature of 579 °C, show good agreement with measured spectra.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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