Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:52:24.098Z Has data issue: false hasContentIssue false
  • English
  • Français

A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

Published online by Cambridge University Press:  26 February 2011

Jeff F. Young ,
H. R. Jensen  and
Martine Simard-Normandin
Jeff F. Young
Affiliation:
Division of Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada KlA 0R6
H. R. Jensen
Affiliation:
Division of Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada KlA 0R6
Martine Simard-Normandin
Affiliation:
Northern Telecom Electronics Ltd., Ottawa, Ontario, Canada K1Y 4H7
Get access

Abstract

A simple, non-destructive technique to characterize the properties of ion-implanted semiconductor wafers is described. The method consists of measuring the infrared attenuated total reflection (ATR) spectrum of the implanted layer/air interface and fitting it with a calculated spectrum which takes account of the free carrier density profile and any possible residual damage and/or amorphization. The results obtained on boron and implanted Si wafers, annealed at different temperatures in a rapid thermal annealer, are compared with their respective SIMS profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 83
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lunnon, M.E., Chen, J.T. and Baker, J.E., Appl. Phys. Lett. 145, 1056 (1984).Google Scholar
2. see articles in SPIE Vol. 463, Advanced Semiconductor Processing and Characterization of Electronic and Optical Materials (1984).Google Scholar
3. Hubler, G.K., Malmberg, P.R., Waddell, C.N., Spitzer, W.G. and Fredrickson, J.E., Radiation Effects 60, 35 (1982).Google Scholar
14. Bennaceur, R., A.I.P. Conference Proceedings No. 140, (1978) p. 336.Google Scholar
5. see articles in Surface Polaritons, Agranovich, V.M. and Maradudin, A.A. eds. (North-Holland, Amsterdam, 1982).Google Scholar
6. Otto, A., Z. Phyzik 216, 398 (1968).Google Scholar
7. Abeles, F. and Lopez-Rios, T. in Surface Polaritons Agranovich, V.M. and Maradudin, A.A. eds. (North-Holland, Amsterdam, 1982). p. 239.Google Scholar
8. Heavens, O.S., Optical Properties of Thin Films, (Academic, New York, 1955).Google Scholar
9. Tamir, T. in Integrated Optics Tamir, T. ed. (Springer-Verlag, New York, 1975) p. 1.Google Scholar
10. American Institute of Physics Handbook, Gray, D.E. ed. (McGraw-Hill Book Company, New York, 1957).Google Scholar
11. The manufacturer, Cooke, Troughton and Simms Ltd., York, England.Google Scholar
12. Bennett, H.E. and Bennett, J.M., Optical Properties and Electron Structure of Metals and Alloys, Abelés, F. ed. (North-Holland, Amsterdam, 1966) p. 175.Google Scholar