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A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Zhiwen Chen ,
C. M. L. Wu ,
C. H. Shek ,
J. K. L. Lai ,
Z. Jiao  and
M. H. Wu
Zhiwen Chen
Affiliation:
[email protected], City University of Hong Kong, Department of Physics & Materials Science, 83 Tat Chee Avenue, Kowloon,Hong Kong, Hong Kong, N/A, China, People's Republic of, +852 21942820, +852 27887830
C. M. L. Wu
Affiliation:
[email protected], City University of Hong Kong, Department of Physics & Materials Science, Tat Chee Avenue, Kowloon Tong, Hong Kong, N/A, China, People's Republic of
C. H. Shek
Affiliation:
[email protected], City University of Hong Kong, Department of Physics & Materials Science, Tat Chee Avenue, Kowloon Tong, Hong Kong, N/A, China, People's Republic of
J. K. L. Lai
Affiliation:
[email protected], City University of Hong Kong, Department of Physics & Materials Science, Tat Chee Avenue, Kowloon Tong, Hong Kong, N/A, China, People's Republic of
Z. Jiao
Affiliation:
[email protected], Shanghai University, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai, 200444, China, People's Republic of
M. H. Wu
Affiliation:
[email protected], Shanghai University, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai, 200444, China, People's Republic of
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Abstract

The microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Keywords

transmission electron microscopy (TEM)ablationthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C17-03
Copyright
Copyright © Materials Research Society 2008

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