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Silver Patterning by Reactive Ion Beam Etching for Microelectronics Application
Published online by Cambridge University Press: 17 March 2011
Abstract
Dry etching of silver for the metallization in microelectronics is investigated. Etching is performed using an electron-cyclotron-resonance reactive-ion-beam-etching system (ECR-RIBE) in an Ar/CF4 or Ar/CF4/O2 mixture. The etch characteristics are strongly affected by ion energy (beam voltage and microwave energy); the O2 concentration in the reactive mixture has only a small effect. An anisotropic, smooth etch profile and clean surface are obtained. Focused ion beam (FIB) and atomic force microscopy (AFM) have been used to study the etched profile and the roughness, respectively.
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- Copyright © Materials Research Society 2004
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