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Silicon-compatible Ultra-long-range Surface Plasmon Modes

Published online by Cambridge University Press:  01 February 2011

Ali Sabbah
Affiliation:
[email protected], Colorado School of Mines, Physics, 1523 Illinois Street, Golden, CO, 80401, United States, 303 273-3920, 303 2733919
C. G. Durfee
Affiliation:
[email protected], Colorado School of Mines, Golden, CO, 80401, United States
R. T. Collins
Affiliation:
[email protected], Colorado School of Mines, Golden, CO, 80401, United States
T. E. Furtak
Affiliation:
[email protected], Colorado School of Mines, Golden, CO, 80401, United States
R. E. Hollingsworth
Affiliation:
[email protected], ITN Energy Systems, Littleton, CO, 80127, United States
P. D. Flammer
Affiliation:
[email protected], Colorado School of Mines, Golden, CO, 80401, United States
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Abstract

Surface plasmon waveguides show promise as sub-wavelength signal elements in integrated optoelectronic devices. Modulation of these signals requires designs that are compatible with existing semiconductor fabrication technologies, such as MOS structures. We show that waveguides of this type are not only practical, but offer distinct advantages. In particular, an asymmetric geometry is shown to support very long-range modes. In preliminary experimental results we report the observation of these modes in an visible wavelength analog structure. Our models predict that these characteristics can be maintained while shifting the operating conditions to the fiber communications band in waveguides constructed in silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Liu, A. et al, Nature 427, 615, (2004).Google Scholar
2. Stegeman, G. I. and Burke, J. J., J. Appl. Phys. 54, 4841, (1983).Google Scholar
3. Nikolagsen, T., Lesson, K., and Bozhevolnyi, S. I., Appl. Phys. Lett. 85, 5833, (2004).Google Scholar
4. Durfee, C. G., Furtak, T. E., Collins, R. T., and Hollingsworth, R. E., Submitted to J. Appl. Phys. (2008).Google Scholar
5. Guo, J., and Adato, R., Opt. Exp. 14, 12409, (2006).Google Scholar